| PART |
Description |
Maker |
| MSM531652F |
1,048,576-Words x 16-bit or 2,097,152-Bytes x 8-bit MaskROM
From old datasheet system
|
OKI
|
| THM72V2010AG THM72V2010AG-60 THM72V2010AG-70 |
2,097,152 WORDS X 72 BIT DYNAMIC RAM MODULE
|
Toshiba Semiconductor
|
| THM72V2010ATG-70 THM72V2010AG-70 THM72V2010ATG-60 |
2,097,152 WORDS X 72 BIT DYNAMIC RAM MODULE
|
Toshiba Corporation
|
| GM72V66841ET-7 |
2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
|
Hynix Semiconductor
|
| AK5322048W AK5322048Z |
2,097,152 Word by 32 Bit CMOS Dynamic Random Access Memory
|
ACCUTEK MICROCIRCUIT CORPORATION
|
| MSM56V16400DH-15TS-K MSM56V16400D-12TS-K |
2-Bank X 2,097,152-Word X 4-Bit SYNCHRONOUS DYNAMIC RAM 2，银行甲2097152字4位同步动态随机存储器
|
OKI SEMICONDUCTOR CO., LTD.
|
| MSC23S2640E-8BS8 MSC23S2640E |
2,097,152 Word x 64 Bit SYNCHRONOUS DYNAMIC RAM MODULE (1BANK):
|
OKI SEMICONDUCTOR CO., LTD.
OKI[OKI electronic componets]
OKI electronic components
|
| MSM51V16800DSL-70TS-K MSM51V16800D MSM51V16800D-50 |
2,097,152-Word X 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
|
OKI[OKI electronic componets]
|
| MSM51V17800D |
2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
|
OKI electronic componets
|
| M6MGT160S2BVP M6MGB160S2BVP |
16,777,216-BIT (1,048,576 -WORD BY 16-BIT / 2,097,152-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
